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參數資料
| 型號： | KM68V1000BLT-7 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| 中文描述： | 128K的× 8位低功耗和低電壓的CMOS Statinc內存 |
| 文件頁數： | 2/10頁 |
| 文件大?。?/td> | 183K |
| 代理商： | KM68V1000BLT-7 |
KM68V1000B, KM68U1000B Family
CMOS SRAM
Revision 2.0
March 1998
128K x8 bit Low Power and Low Voltage CMOS Static RAM
GENERAL DESCRIPTION
The KM68V1000B and KM68U1000B families are fabricated
by SAMSUNG
′
s advanced CMOS process technology. The
families support various operating temperature ranges and
have various package types for user flexibility of system
design. The families also support low data retention voltage for
battery back-up operation with low data retention current.
FEATURES
Process Technology : Poly Load
Organization : 128Kx8
Power Supply Voltage :
KM68V1000B family : 3.0~3.6V
KM68U1000B family : 2.7~3.3V
Low Data Retention Voltage : 2V(Min)
Three state output and TTL Compatible
Package Type : 32-SOP, 32-TSOP1-0820F/R
Name
CS
1
,CS
2
OE
WE
A
0
~A
16
I/O
1
~I/O
8
Vcc
Vss
N.C
Function
Chip Select Inputs
Output Enable Input
Write Enable Input
Address Inputs
Data Inputs/Outputs
Power
Ground
No Connection
PRODUCT FAMILY
1. The parameter is measured with 30pF test load.
Product Family
Operating Temperature
Vcc Range
Speed(ns)
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
50/15
μ
A
50/15
μ
A
100/20
μ
A
50/15
μ
A
100/20
μ
A
50/15
μ
A
Operating
(I
CC2
, Max)
KM68V1000BL/L-L
KM68U1000BL/L-L
KM68V1000BLE/LE-L
KM68U1000BLE/LE-L
KM68V1000BLI/LI-L
KM68U1000BLI/LI-L
Commercial(0~70
°
C)
3.0~3.6V
2.7~3.3V
3.0~3.6V
2.7~3.3V
3.0~3.6V
2.7~3.3V
70
1)
/100
100
70
1)
/100
100
70
1)
/100
100
40mA
32-SOP
32-TSOP1- R/F
Extended(-25~85
°
C)
Industrial(-40~85
°
C)
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
32-TSOP
Type 1 - Reverse
A11
A9
A8
A13
WE
CS2
A15
VCC
NC
A16
A7
A6
A5
A4
OE
I/O8
I/O7
I/O6
I/O5
A0
A1
A2
A3
Type 1 - Forward
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
N.C
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
A15
CS2
WE
A13
A8
A9
A11
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-SOP
A11
A9
A8
A13
WE
CS2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4
OE
A10
I/O7
I/O6
I/O5
I/O3
I/O2
I/O1
A0
A1
A2
A3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-TSOP
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
A11
Precharge circuit.
Memory array
512 rows
256
×
8 columns
I/O Circuit
Column select
Clk gen.
Row
select
A0 A1 A2 A3 A8
A10
A9
A4
A5
A6
A7
A12
A13
A15
CS1
CS2
WE
OE
I/O
1
Data
cont
Data
cont
I/O
8
A14
Control
Logic
A16
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PDF描述 |
|---|---|
| KM68V1000BLT-7L | 128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BLTE-7 | Octal Buffers/Drivers With 3-State Outputs 20-PDIP -40 to 85 |
| KM68V1000BLTE-7L | 128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BLTE-10 | 128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BL | 128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| KM68V1000BLT-7L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BLTE-10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BLTE-10L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BLTE-7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BLTE-7L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
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