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| 型號： | MTP15N06VL |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM |
| 中文描述： | 15 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 216K |
| 代理商： | MTP15N06VL |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk
≥
2.0) (3)
V(BR)DSS
60
—
—
68
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150
°
C)
Gate–Body Leakage Current (VGS =
±
15 Vdc, VDS = 0 Vdc)
IDSS
—
—
—
—
10
100
μ
Adc
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
(Cpk
≥
2.0) (3)
VGS(th)
1.0
—
1.5
4.0
2.0
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 5.0 Vdc, ID = 7.5 Adc)
(Cpk
≥
2.0) (3)
RDS(on)
—
0.075
0.085
Ohm
Drain–to–Source On–Voltage
(VGS = 5.0 Vdc, ID = 15 Adc)
(VGS = 5.0 Vdc, ID = 7.5 Adc, TJ = 150
°
C)
VDS(on)
—
—
—
—
1.5
1.3
Vdc
Forward Transconductance (VDS = 8.0 Vdc, ID = 7.5 Adc)
gFS
8.0
10
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
—
570
800
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
—
180
250
Reverse Transfer Capacitance
Crss
—
45
90
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
)
RG = 9.1
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
11
20
ns
Rise Time
(VDD = 30 Vdc, ID = 15 Adc,
VGS = 5.0 Vdc,
—
150
300
Turn–Off Delay Time
—
27
50
Fall Time
—
70
140
Gate Charge
VGS = 5.0 Vdc)
—
32
40
nC
(VDS = 48 Vdc, ID = 15 Adc,
—
3.0
—
—
7.0
—
—
11
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 15 Adc, VGS = 0 Vdc)
(IS = 15 Adc, VGS = 0 Vdc, TJ = 150
°
C)
VSD
—
—
0.96
0.85
1.6
—
Vdc
Reverse Recovery Time
dIS/dt = 100 A/
μ
s)
trr
ta
tb
—
63
—
ns
(IS = 15 Adc, VGS = 0 Vdc,
—
42
—
—
21
—
Reverse Recovery Stored Charge
QRR
—
0.140
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die.)
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
—
3.5
4.5
—
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values. Cpk =
3 x SIGMA
Max limit – Typ
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