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參數資料
| 型號： | MTP15N06VL |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM |
| 中文描述： | 15 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數： | 3/8頁 |
| 文件大小： | 216K |
| 代理商： | MTP15N06VL |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
0
2
4
6
8
10
0
10
20
30
35
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
9
2
3
4
8
0
10
20
30
35
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
10
ID, DRAIN CURRENT (AMPS)
20
30
5
0
0.02
0.04
0.06
0.12
R
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0
10
20
30
40
0
5
10
100
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
TJ = 125
°
C
100
°
C
TJ = 25
°
C
VDS
≥
5 V
TJ = –55
°
C
25
°
C
100
°
C
TJ = 100
°
C
25
°
C
–55
°
C
VGS = 0 V
VGS = 10V
VGS = 5 V
40
5
7 V
6 V
5 V
8 V
9 V
40
5
5
6
7
0.08
0.1
35
35
R
0
10
20
30
40
35
0.04
0.08
ID, DRAIN CURRENT (AMPS)
10 V
TJ = 25
°
C
VGS = 5 V
0.06
5
R
(
–50
0.2
0.4
0.6
0.8
2.0
TJ, JUNCTION TEMPERATURE (
°
C)
–25
0
25
50
75
100
150
VGS = 5 V
ID = 7.5 A
1
1.4
1.6
1.8
125
175
1
3
5
7
9
15
25
15
25
0.14
15
25
0.1
15
25
45
50
45
50
1
0
0.12
0.14
0.16
0.02
0
45
50
1.2
15
25
45
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|---|---|
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