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參數資料
| 型號： | MTP2N60 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS |
| 中文描述： | 2 A, 600 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數： | 5/8頁 |
| 文件大小： | 219K |
| 代理商： | MTP2N60 |
5
Motorola TMOS Power MOSFET Transistor Device Data
QG, TOTAL GATE CHARGE (nC)
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
I
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
0.50
0.70
0.80
0
2.0
0.65
0.75
0.85
0.55
0.60
1.6
1.2
0.8
0.4
1.8
1.4
1.0
0.6
0.2
VGS = 0 V
TJ = 25
°
C
15
12
9
6
3
00
4
8
12
16
20
500
V
V
400
300
200
100
0
VDS
TJ = 25
°
C
ID = 2 A
QT
Q1
Q2
Q3
VDS = 100 V
VDS = 250 V
VDS = 400 V
VGS
t
1000
100
10
1
1
10
100
1000
RG, GATE RESISTANCE (OHMS)
TJ = 25
°
C
ID = 2 A
VDS = 300 V
VGS = 10 V
td(off)
td(on)
tf
tr
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain–to–source voltage and
drain current that a transistor can handle safely when it is for-
ward biased. Curves are based upon maximum peak junc-
tion temperature and a case temperature (TC) of 25
°
C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance–Gener-
al Data and Its Use.”
Switching between the off–state and the on–state may tra-
verse any load line provided neither rated peak current (IDM)
nor rated voltage (VDSS) is exceeded and the transition time
(tr,tf) do not exceed 10
μ
s. In addition the total power aver-
aged over a complete switching cycle must not exceed
(TJ(MAX) – TC)/(R
θ
JC).
A Power MOSFET designated E–FET can be safely used
in switching circuits with unclamped inductive loads. For reli-
able operation, the stored energy from circuit inductance dis-
sipated in the transistor while in avalanche must be less than
the rated limit and adjusted for operating conditions differing
from those specified. Although industry practice is to rate in
terms of energy, avalanche energy capability is not a con-
stant. The energy rating decreases non–linearly with an in-
crease of peak current in avalanche and peak junction
temperature.
Although many E–FETs can withstand the stress of drain–
to–source avalanche at currents up to rated pulsed current
(IDM), the energy rating is specified at rated continuous cur-
rent (ID), in accordance with industry custom. The energy rat-
ing must be derated for temperature as shown in the
accompanying graph (Figure 12). Maximum energy at cur-
rents below rated continuous ID can safely be assumed to
equal the values indicated.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MTP2N60E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS |
| MTP2P50 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM |
| MTP2P50E | 功能描述:MOSFET 500V 2A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTP2P50E_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 2 Amps, 500 Volts |
| MTP2P50EG | 功能描述:MOSFET 500V 2A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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